N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

Journal Article · Mon Dec 31 00:00:00 EST 2012 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2012V042N12ABEH014983· OSTI ID:22066614

Eliseev, P G ^[1]

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1. Centre for High-Technology Materials, University of New Mexico, Albuquerque (United States)

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

• OSTI ID: 22066614
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 42, Issue 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ENERGY-LEVEL TRANSITIONS
RELIABILITY
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS