Molecular phosphorus ion source for semiconductor technology

Journal Article · Wed Feb 15 00:00:00 EST 2012 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3672112· OSTI ID:22066302

Gushenets, V I; Bugaev, A S; Oks, E M ^[1]; Hershcovitch, A ^[2]; Kulevoy, T V ^[3]

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1. Institute of High Current Electronics SB RAS, Tomsk 634055 (Russian Federation)
2. Brookhaven National Laboratory, Upton, New York 11973 (United States)
3. Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation)

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800 deg. C. Thus, one of the main conditions for producing maximum P{sub 4}{sup +} fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800 deg. C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P{sub 4}{sup +} ion beam current greater than 30% of the total beam current.

• OSTI ID: 22066302
• Journal Information: Review of Scientific Instruments, Vol. 83, Issue 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAM CURRENTS
COOLING SYSTEMS
ELECTRIC DISCHARGES
ION BEAMS
ION SOURCES
MOLECULAR BEAMS
OVENS
PHOSPHORUS IONS
SEMICONDUCTOR MATERIALS
STEAM LINES