Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

Journal Article · Sun May 15 00:00:00 EDT 2011 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3595678· OSTI ID:22062337

Ray, M P; Baldwin, J W; Butler, J E; Pate, B B ^[1]; Feygelson, T I ^[2]

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1. U.S. Naval Research Laboratory, Washington, DC 20375 (United States)
2. SAIC, 1220 12th St. SE, Washington, DC 20003 (United States)

The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

• OSTI ID: 22062337
• Journal Information: Review of Scientific Instruments, Vol. 82, Issue 5; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ABLATION
DIAMONDS
ELECTRIC CONTACTS
ION BEAMS
ION IMPLANTATION
LASER BEAM MACHINING
MILLING
MONOCRYSTALS
THIN FILMS