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Title: Atom chips on direct bonded copper substrates

Abstract

We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (>100 {mu}m) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (<8 h) fabrication, and three-dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips is used to magnetically trap laser cooled {sup 87}Rb atoms. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width).

Authors:
; ; ; ; ; ;  [1]
  1. Air Force Research Laboratory, Hanscom AFB, Massachusetts 01731 (United States)
Publication Date:
OSTI Identifier:
22062238
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 82; Journal Issue: 2; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ADHESION; ASPECT RATIO; COOLING; COPPER; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; ETCHING; FABRICATION; IMPEDANCE; MAGNETIC FIELDS; RUBIDIUM 87; SUBSTRATES; THERMAL CONDUCTIVITY; TRAPS; WIRES

Citation Formats

Squires, Matthew B, Stickney, James A, Carlson, Evan J, Baker, Paul M, Buchwald, Walter R, Wentzell, Sandra, and Miller, Steven M. Atom chips on direct bonded copper substrates. United States: N. p., 2011. Web. doi:10.1063/1.3529434.
Squires, Matthew B, Stickney, James A, Carlson, Evan J, Baker, Paul M, Buchwald, Walter R, Wentzell, Sandra, & Miller, Steven M. Atom chips on direct bonded copper substrates. United States. https://doi.org/10.1063/1.3529434
Squires, Matthew B, Stickney, James A, Carlson, Evan J, Baker, Paul M, Buchwald, Walter R, Wentzell, Sandra, and Miller, Steven M. 2011. "Atom chips on direct bonded copper substrates". United States. https://doi.org/10.1063/1.3529434.
@article{osti_22062238,
title = {Atom chips on direct bonded copper substrates},
author = {Squires, Matthew B and Stickney, James A and Carlson, Evan J and Baker, Paul M and Buchwald, Walter R and Wentzell, Sandra and Miller, Steven M},
abstractNote = {We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (>100 {mu}m) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (<8 h) fabrication, and three-dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips is used to magnetically trap laser cooled {sup 87}Rb atoms. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width).},
doi = {10.1063/1.3529434},
url = {https://www.osti.gov/biblio/22062238}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 2,
volume = 82,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2011},
month = {Tue Feb 15 00:00:00 EST 2011}
}