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Title: Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

Abstract

Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

Authors:
; ; ; ;  [1]
  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22054139
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 30; Journal Issue: 1; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ALUMINIUM OXIDES; CATHODES; CHEMICAL VAPOR DEPOSITION; DEFECTS; ENCAPSULATION; HUMIDITY; LIGHT EMITTING DIODES; PLASMA; SILICON NITRIDES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; WATER VAPOR

Citation Formats

Keuning, W, Weijer, P van de, Lifka, H, Kessels, W M. M., Creatore, M, Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven, and Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. United States: N. p., 2012. Web. doi:10.1116/1.3664762.
Keuning, W, Weijer, P van de, Lifka, H, Kessels, W M. M., Creatore, M, Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven, & Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. United States. https://doi.org/10.1116/1.3664762
Keuning, W, Weijer, P van de, Lifka, H, Kessels, W M. M., Creatore, M, Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven, and Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven. 2012. "Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks". United States. https://doi.org/10.1116/1.3664762.
@article{osti_22054139,
title = {Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks},
author = {Keuning, W and Weijer, P van de and Lifka, H and Kessels, W M. M. and Creatore, M and Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven and Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven},
abstractNote = {Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).},
doi = {10.1116/1.3664762},
url = {https://www.osti.gov/biblio/22054139}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 1,
volume = 30,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2012},
month = {Sun Jan 15 00:00:00 EST 2012}
}