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Title: Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential more » applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells. « less
Authors: ; ; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 22054124
Resource Type:Journal Article
Resource Relation:Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 29; Journal Issue: 6; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM COMPOUNDS; ANNEALING; DEPOSITION; DIRECT CURRENT; DOPED MATERIALS; ETCHING; GALLIUM; GLASS; INDIUM COMPOUNDS; MAGNETRONS; MORPHOLOGY; OPTICAL PROPERTIES; SILICON; SOLAR CELLS; THIN FILMS; TIN OXIDES; TITANIUM; ZINC OXIDES