Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3609786· OSTI ID:22054114

Wang, X J; Chang, Y; Hou, Y B; Becker, C R; Kodama, R; Aqariden, F; Sivananthan, S ^[1]

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1. Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 (United States)

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermal strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.

• OSTI ID: 22054114
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 29, Issue 5; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CRYSTAL GROWTH
ELECTRON DIFFRACTION
FOURIER TRANSFORM SPECTROMETERS
GRAIN ORIENTATION
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SPATIAL RESOLUTION
STRESS RELAXATION
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC TELLURIDES