Features of Controlled Laser Thermal Cleavage of Crystalline Silicon
Journal Article
·
· Crystallography Reports
- Gomel State University (Belarus)
Controlled laser thermal cleavage of crystalline silicon has been numerically simulated. A 3D analysis of the thermoelastic fields formed in a single-crystal silicon wafer as a result of successive laser heating and exposure to a coolant was performed for three different versions of anisotropy. The simulation was performed for laser irradiation with different wavelengths: 1.06 and 0.808 {mu}m. The calculation results have been experimentally verified using a YAG laser. The results can be used in the electronics industry to optimize the precise separation of silicon wafers into crystals.
- OSTI ID:
- 22054077
- Journal Information:
- Crystallography Reports, Vol. 55, Issue 6; Other Information: Copyright (c) 2010 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
- Country of Publication:
- United States
- Language:
- English
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