Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Department of Chemistry, Vanderbilt University, Nashville, Tennessee 37235 (United States)
Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.
- OSTI ID:
- 22053926
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 2; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALUMINIUM
ALUMINIUM OXIDES
BONDING
CARBON
CHEMICAL VAPOR DEPOSITION
ORGANOMETALLIC COMPOUNDS
OXYGEN
PYROLYSIS
STOICHIOMETRY
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY