ITEP MEVVA ion beam for rhenium silicide production

Journal Article · Mon Feb 15 00:00:00 EST 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3264636· OSTI ID:22053915

Kulevoy, T; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S ^[1]; Gerasimenko, N; Medetov, N; Zaporozhan, O ^[2]

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1. Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation)
2. Moscow Institute of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation)

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

• OSTI ID: 22053915
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 2; Conference: ICIS 2009: 13. international conference on ion sources, Gatlinburg, TN (United States), 20-25 Sep 2009; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ION BEAMS
ION IMPLANTATION
ION SOURCES
MASS SPECTROSCOPY
MICROANALYSIS
RADIATION DOSES
RESEARCH PROGRAMS
RHENIUM IONS
RHENIUM SILICIDES
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
X-RAY DIFFRACTION
X-RAY EMISSION ANALYSIS