Thermoelastic analysis of a silicon surface under x-ray free-electron-laser irradiation

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3455203· OSTI ID:22053772

Vasconcellos, Aurea R; Luzzi, Roberto ^[1]

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1. Instituto de Fisica ''Gleb Wataghin'', Universidade Estadual de Campinas (UNICAMP), 13083-970 Campinas, Sao Paulo (Brazil)

We present an analysis of the time evolution of a highly excited silicon substrate after partial absorption of a femtosecond soft x-ray pulse. The detailed time-dependent thermoelastic behavior of the substrate in terms of the displacements u(r,t) is derived for time delays for which the usual local thermodynamic variables, temperature T(r,t) and density n(r,t), become well-defined, namely, a few hundred femtoseconds after x-ray pulse absorption. For practical optical components under present conditions of operation with trains of pulses, we find that in a worst case scenario, already the second pulse in the train could be adversely affected by dynamic thermal distortion induced by the preceding pulse.

• OSTI ID: 22053772
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 7; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ABSORPTION
DENSITY
FREE ELECTRON LASERS
IRRADIATION
PULSES
SILICON
SOFT X RADIATION
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THERMOELASTICITY
TIME DELAY
TIME DEPENDENCE