Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3425805· OSTI ID:22053721

Pak, J; Lin, W; Wang, K; Chinchore, A; Shi, M; Ingram, D C; Smith, A R; Sun, K; Lucy, J M; Hauser, A J; Yang, F Y ^[1]

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1. Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

• OSTI ID: 22053721
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GALLIUM NITRIDES
GRAIN ORIENTATION
IRON NITRIDES
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
REFLECTION
STOICHIOMETRY
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES