Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Journal Article · Fri Jan 15 00:00:00 EST 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3264479· OSTI ID:22053602

Im, Inho; Jung, Mina; Koo, Jieun; Lee, Hyunjae; Park, Jinsub; Minegishi, Tsutomu; Park, Seunghwan; Fujii, Katsushi; Yao, Takafumi; Kil, Gyungsuk; Hanada, Takashi; Chang, Jiho ^[1]

---

1. Center for Interdisciplinary Research, Tohoku University, 6-3, Aramaki, Aoba-ku, Sendai 980-8578 (Japan)

The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 deg. C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density ({approx}2x10{sup 6} cm{sup -2} for AlN/Zn-polar ZnO).

• OSTI ID: 22053602
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 1; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ANIONS
CATIONS
MORPHOLOGY
ROUGHNESS
SEMICONDUCTOR MATERIALS
STOICHIOMETRY
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
ZINC OXIDES