A method to investigate the electron scattering characteristics of ultrathin metallic films by in situ electrical resistance measurements

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3186059· OSTI ID:22053526

Trindade, I G; Sousa, J B ^[1]; Fermento, R ^[2]; Leitao, D ^[1]

---

1. IFIMUP and IN, Rua do campo Alegre, 687, 4169-007 Porto (Portugal)
2. Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)

In this article, a method to measure the electrical resistivity/conductivity of metallic thin films during layer growth on specific underlayers is described. The in situ monitoring of an underlayer electrical resistance, its change upon the incoming of new material atoms/molecules, and the growth of a new layer are presented. The method is easy to implement and allows obtaining in situ experimental curves of electrical resistivity dependence upon film thickness with a subatomic resolution, providing insight in film growth microstructure characteristics, specular/diffuse electron scattering surfaces, and optimum film thicknesses.

• OSTI ID: 22053526
• Journal Information: Review of Scientific Instruments, Vol. 80, Issue 7; Other Information: (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ATOMS
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRON COLLISIONS
ELECTRONS
MICROSTRUCTURE
MOLECULES
RESOLUTION
SCATTERING
THICKNESS
THIN FILMS