Temperature dependence on dry etching of Al{sub 2}O{sub 3} thin films in BCl{sub 3}/Cl{sub 2}/Ar plasma
- School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heukseok-Dong, Dongjak-Gu, Seoul 156-756 (Korea, Republic of)
During the etching process, the wafer surface temperature is an important parameter which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the redeposition of reaction products on feature surfaces. In this study, the authors investigated that the effect of substrate temperature on the etch rate of Al{sub 2}O{sub 3} thin film and selectivity of Al{sub 2}O{sub 3} thin film over hard mask material (such as SiO{sub 2}) thin film in inductively coupled plasma as functions of Cl{sub 2} addition in BCl{sub 3}/Ar plasma, rf power, and dc-bias voltage based on the substrate temperature in range of 10-80 degree sign C. The elements existed on the surface were analyzed by energy dispersive x-ray and x-ray photoelectron spectroscopy.
- OSTI ID:
- 22053504
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
ARGON
BORON CHLORIDES
CHLORINE
ELECTRIC POTENTIAL
ELECTRON TEMPERATURE
ETCHING
ION TEMPERATURE
PLASMA
PROCESSING
QUANTITATIVE CHEMICAL ANALYSIS
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
VAPOR PRESSURE
X-RAY PHOTOELECTRON SPECTROSCOPY