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Title: Incorporation of hydrogen in CuInSe{sub 2}: Improvements of the structure

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.3620685· OSTI ID:22051356
; ; ;  [1]
  1. Department of Experimental Physics, Urals Federal University, 620002, Ekaterinburg (Russian Federation)

CuInSe{sub 2} single crystals were ion implanted with a dose of 3 x 10{sup 16} cm{sup -2} by 2.5 keV H{sup +} at 150 and 250 deg. C Before and after the implantation the crystals were analyzed by Rutherford backscattering/channeling (RBS/C) along the <112> axis using 2 MeV He{sup +}. The RBS/C spectra indicate that the implantation at 150 deg. C introduces a layer of radiation damage, whereas after the implantation at 250 deg. C no structural deterioration of the lattice can be seen. Quite the contrary, the RBS/C spectra reveal a considerable decrease in the dechanneling parameters suggesting improvements in the lattice structural quality attributed to the incorporation of hydrogen.

OSTI ID:
22051356
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 29, Issue 5; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
Country of Publication:
United States
Language:
English