Deep GaN etching by inductively coupled plasma and induced surface defects

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3478674· OSTI ID:22051156

Ladroue, J; Meritan, A; Boufnichel, M; Lefaucheux, P; Ranson, P; Dussart, R ^[1]

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1. GREMI, 14 rue d'Issoudun, BP 6744, 45067 Orleans Cedex 2 (France) and STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

GaN etching was studied in Cl{sub 2}/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

• OSTI ID: 22051156
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 5; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHLORINE
DEFECTS
DISLOCATIONS
EMISSION SPECTROSCOPY
ETCHING
GALLIUM NITRIDES
IMPURITIES
LANGMUIR PROBE
PHOTOLUMINESCENCE
PLASMA