Development of metal nanocluster ion source based on dc magnetron plasma sputtering at room temperature

Journal Article · Tue Sep 15 00:00:00 EDT 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3213612· OSTI ID:22051044

Majumdar, Abhijit; Koepp, Daniel; Ganeva, Marina; Hippler, Rainer ^[1]; Datta, Debasish; Bhattacharyya, Satyaranjan ^[2]

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1. Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany)
2. Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata 700 064 (India)

A simple and cost effective nanocluster ion source for the deposition of size selected metal nanocluster has been developed based on the dc magnetron discharge (including pulsed dc discharge). The most important and interesting feature of this cluster source is that it is working at room temperature, cooled by chilled water during the experiment. There is no extraction unit in this device and the cluster streams flow only due to the pressure gradient from source chamber to substrate via quadrupole mass filter. It has provision of multiple substrate holders in the deposition chamber, which can be controlled manually. The facility consists of quadrupole mass filter (QMF 200), which can select masses in the range of 2-125 000 atoms depending on the target materials, with a constant mass resolution (M/{Delta}M{approx}25). The dc magnetron discharge at a power of about 130 W with Ar as feed/buffer gas was used to produce the Cu nanocluster in an aggregation tube and deposited on Si (100) wafer temperature.

• OSTI ID: 22051044
• Journal Information: Review of Scientific Instruments, Vol. 80, Issue 9; Other Information: (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AGGLOMERATION
ATOMS
COPPER
DEPOSITION
ION SOURCES
MAGNETRONS
MASS RESOLUTION
NANOSTRUCTURES
PLASMA
PRESSURE GRADIENTS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K