Creation and recovery of a W(111) single atom gas field ion source

Journal Article · Sat Apr 21 00:00:00 EDT 2012 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.3702209· OSTI ID:22047200

Pitters, Jason L ^[1]; Urban, Radovan ^[2]; Wolkow, Robert A ^[1]

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1. National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta T6G 2M9 (Canada)
2. Department of Physics, University of Alberta, Edmonton, Alberta T6G 2G7 (Canada)

Tungsten single atom tips have been prepared from a single crystal W(111) oriented wire using the chemical assisted field evaporation and etching method. Etching to a single atom tip occurs through a symmetric structure and leads to a predictable last atom unlike etching with polycrystalline tips. The single atom tip formation procedure is shown in an atom by atom removal process. Rebuilds of single atom tips occur on the same crystalline axis as the original tip such that ion emission emanates along a fixed direction for all tip rebuilds. This preparation method could be utilized and developed to prepare single atom tips for ion source development.

• OSTI ID: 22047200
• Journal Information: Journal of Chemical Physics, Vol. 136, Issue 15; Other Information: (c) 2012 Crown; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
EVAPORATION
ION EMISSION
ION SOURCES
MONOCRYSTALS
POLYCRYSTALS
REMOVAL
TUNGSTEN