Electronic properties and deep traps in electron-irradiated n-GaN
- Karpov Institute of Physical Chemistry (Russian Federation)
- Joint Stock Company 'Federal State Research and Design Institute of Rare Metal Industry (Giredmet)' (Russian Federation)
The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = 10{sup 16}-10{sup 18} cm{sup -2}) and subsequent heat treatments in the temperature range 100-1000 Degree-Sign C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 Multiplication-Sign 10{sup 14}-1 Multiplication-Sign 10{sup 16} cm{sup -3}), moderately Si-doped (n = (1.2-2) Multiplication-Sign 10{sup 17} cm{sup -3}), and heavily Si-doped (n = (2-3.5) Multiplication-Sign 10{sup 18} cm{sup -3}) epitaxial n-GaN layers grown on Al{sub 2}O{sub 3} substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to E{sub c} -0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100-1000 Degree-Sign C, with the main stage of the annealing of radiation defects at about 400 Degree-Sign C.
- OSTI ID:
- 22039005
- Journal Information:
- Semiconductors, Vol. 46, Issue 4; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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