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Title: Control of the optical and crystalline properties of TiO{sub 2} in visible-light active TiO{sub 2}/TiN bi-layer thin-film stacks

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3671428· OSTI ID:22038848
; ; ;  [1]
  1. Laboratoire de Genie des Procedes Plasma et Traitement de Surface, Universite Pierre et Marie Curie, 11 Rue Pierre et Marie Curie, Paris 75231 (France)

Multi-layered thin films of TiO{sub 2} and TiN were created by rf reactive magnetron sputtering, and their crystalline, optical, and photoelectrochemical properties were measured. The overall composition of the films (TiO{sub 2}-to-TiN ratio) was kept constant with the height of each film. The number of layers and thickness of each layer was controlled to create bi-layer thin films that were composed of: 9 bi-layers, 18 bi-layers, 27 bi-layers, 36 bi-layers, and 45 bi-layers. XRD patterns were observed for each film after annealing to measure the grain size and composition of anatase and rutile as a function of temperature. It was found that the phase-transition temperature is able to be substantially controlled (between 550 deg. C and 850 deg. C) for the anatase to rutile transition by varying the number of layers/thickness of each layer. In addition, bi-layer stacking significantly affected the film's optical properties by lowering the bandgap into the visible-light region, and also showed up to three times the improvement in photoelectrochemical performance under uv and visible irradiation. Overall, bi-layer stacking of TiO{sub 2}/TiN films has shown a unique and highly desirable control over several important physical characteristics that can be beneficial for many applications, such as high-temperature sensors and optoelectronic devices.

OSTI ID:
22038848
Journal Information:
Journal of Applied Physics, Vol. 111, Issue 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English