Ar plasma induced deep levels in epitaxial n-GaAs

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3673322· OSTI ID:22038836

Venter, A; Nyamhere, C; Botha, J R ^[1]; Auret, F D; Janse van Rensburg, P J; Meyer, W E; Coelho, S M. M. ^[2]; Kolkovsky, V l ^[3]

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1. Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)
2. Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)
3. Technische Universitaet, Dresden, 01062 Dresden (Germany)

Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E{sub c} - 0.04 eV, E{sub c} - 0.07 eV, E{sub c} - 0.19 eV, E{sub c} - 0.31 eV, E{sub c} - 0.53 eV, and E{sub c} - 0.61 eV). The trap, E{sub c} - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E{sub c} - 0.31 eV and E{sub c} - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

• OSTI ID: 22038836
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 1; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
E CENTERS
ELECTRONS
EPITAXY
ETCHING
EV RANGE
GALLIUM ARSENIDES
HYDROGEN
IRRADIATION
LAYERS
METASTABLE STATES
PLASMA
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SURFACES
TRAPS