Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

Journal Article · Sat Oct 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3651400· OSTI ID:22038745

Molle, Alessandro ^[1]; Baldovino, Silvia; Fanciulli, Marco ^[1]; Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios ^[2]

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1. Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy)
2. MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10 (Greece)

Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

• OSTI ID: 22038745
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 8; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CAPACITORS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
GERMANIUM
GERMANIUM OXIDES
INTERFACES
LANTHANUM COMPOUNDS
LAYERS
MAGNETIC RESONANCE
MOLECULAR BEAM EPITAXY
PLATINUM
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
TRAPPING
X-RAY PHOTOELECTRON SPECTROSCOPY