Selective adsorption of atomic hydrogen on a h-BN thin film
- Japan Atomic Energy Agency, Tokaimura, Nakagun, Ibarakiken 319-1195 (Japan)
- Graduate School of Human Development and Environment, Kobe University, Nada-ku, Kobe 657-8501 (Japan)
The adsorption of atomic hydrogen on hexagonal boron nitride (h-BN) is studied using two element-specific spectroscopies, i.e., near-edge x-ray absorption fine structure (NEXAFS) spectroscopy and x-ray photoelectron spectroscopy (XPS). B K-edge NEXAFS spectra show a clear change in the energy region of the {pi}{sup *} band before and after reaction with atomic deuterium. On the other hand, N K-edge NEXAFS spectra show only a little change. B 1s XPS spectra show a distinct component at the low binding energy side of a main component, while N 1s XPS spectra show peak broadening at the high binding energy side. These experimental results are analyzed by the discrete variational X{alpha} method with a core-hole effect and are explained by a model in which hydrogen atoms are preferentially adsorbed on the B sites of h-BN. Based on the experimental and theoretical results, we propose a site-selective property of BN material on adsorption of atomic hydrogen.
- OSTI ID:
- 22038633
- Journal Information:
- Journal of Chemical Physics, Vol. 135, Issue 1; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ADSORPTION
BINDING ENERGY
BORON NITRIDES
FINE STRUCTURE
HYDROGEN
SEMICONDUCTOR MATERIALS
SPECTRA
THIN FILMS
VARIATIONAL METHODS
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY