Secondary electron emission and self-consistent charge transport in semi-insulating samples

Journal Article · Mon Aug 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3608151· OSTI ID:22036701

Fitting, H -J ^[1]; Touzin, M ^[2]

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1. Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock (Germany)
2. Unite Materiaux et Transformations, UMR CNRS 8207, Universite de Lille 1, F-59655 Villeneuve d'Ascq (France)

Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate {delta}(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges {rho}(x,t), field F(x,t), and potential V(x,t) are obtained where V{sub 0} = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., {sigma} {eta} + {delta} < 1.

• OSTI ID: 22036701
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CHARGE CARRIERS
CHARGE TRANSPORT
COMPUTERIZED SIMULATION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRON EMISSION
HOLES
ITERATIVE METHODS
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SPATIAL DISTRIBUTION
SURFACE POTENTIAL
TEMPERATURE DEPENDENCE
TRAPPING