In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices

Journal Article · Mon Aug 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3627171· OSTI ID:22036698

Suchalkin, S; Belenky, G ^[1]; Svensson, S P ^[2]; Laikhtman, B ^[3]; Smirnov, D; Tung, L C ^[4]; Bandara, S ^[5]

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1. State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)
2. U.S.Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783 (United States)
3. Hebrew University of Jerusalem , Racah Institute of Physics, IL-91904 Jerusalem (Israel)
4. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida, 32310 (United States)
5. AMSRD CER NV ST IFT, Night Vision and Electronic Sensors Directorate, Ft Belvoir, Virginia (United States)

In plane and growth direction electron effective mass in short period InAs/GaSb semiconductor superlattices (SL) was measured using cyclotron resonance at different orientations of magnetic field with respect to SL growth direction. It was demonstrated that the electron spectrum near the bottom of the SL subband has 3D character, with the in-plane effective masses ranging from 0.023 m{sub 0} to 0.028 m{sub 0} and growth direction effective masses of 0.03-0.034 m{sub 0} depending on the SL period and growth conditions. The measured effective masses are close to those calculated in the weak coupling limit of the Kronig-Penney model. In this limit the SL electron effective mass is a weighted average of the electron effective masses of corresponding bulk materials. Correlation between the magnitude of cyclotron mobility, amplitude of negative magnetoresistance, and steepness of the long wavelength side of the photoluminescence spectrum indicate that the crystalline structure disorder is a major factor contributing to the momentum relaxation time of the electrons.

• OSTI ID: 22036698
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CORRELATIONS
COUPLING
CRYSTAL GROWTH
ELECTRON CYCLOTRON-RESONANCE
ELECTRON SPECTRA
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
MOBILITY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RELAXATION TIME
SEMICONDUCTOR MATERIALS
SUPERLATTICES