Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

Journal Article · Mon Aug 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3611032· OSTI ID:22036675

Khanal, D R; Levander, A X; Wu, J ^[1]; Yu, K M; Liliental-Weber, Z; Walukiewicz, W ^[2]; Grandal, J; Sanchez-Garcia, M A; Calleja, E ^[3]

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1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
3. Department of Ingenieria Electronica-ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid (Spain)

We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy {alpha} particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

• OSTI ID: 22036675
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 3; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ALPHA PARTICLES
CARRIER MOBILITY
CHARGE CARRIERS
COULOMB SCATTERING
DECOUPLING
DOPED MATERIALS
ELECTRIC FIELDS
HALL EFFECT
IMPURITIES
INDIUM NITRIDES
IRRADIATION
QUANTUM WIRES
ROUGHNESS
SEMICONDUCTOR MATERIALS
SURFACES
THIN FILMS