Optimization on photoelectric detection based on stacked La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}}/LaAlO{sub 3-{delta}} multijunctions

Journal Article · Mon Aug 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3621143· OSTI ID:22036672

Xing, Jie; Yinghao, Hui ^[1]; Jiaguo, Er; Yang, Fang ^[2]

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1. School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083 (China)
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

Three multijunctions consisting of La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}} and LaAlO{sub 3-{delta}} on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

• OSTI ID: 22036672
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 3; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINATES
ELECTRONIC STRUCTURE
HELIUM-NEON LASERS
LANTHANUM COMPOUNDS
LAYERS
MANGANATES
MOLECULAR BEAM EPITAXY
NONLINEAR PROBLEMS
OXYGEN
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
STRONTIUM COMPOUNDS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K