Measurement of valence band structure in boron-zinc-oxide films by making use of ion beams
- Department of Electrophysics, Kwangwoon University, Seoul 139-701 (Korea, Republic of)
Measurement of valence band structure in the boron-zinc oxide (BZO) films was developed using the secondary electron emission due to the Auger neutralization of ions. The energy distribution profile of the electrons emitted from boron-zinc-oxide films was measured and rescaled so that Auger self-convolution arose; thus, revealing the detailed structure of the valence band and suggesting that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film.
- OSTI ID:
- 22027853
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 26; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Measurement of valence band structure in arbitrary dielectric films
Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond
Atmospheric pressure chemical vapor deposition of doped zinc oxide thin films and their electrical and optical properties
Journal Article
·
Mon Oct 15 00:00:00 EDT 2012
· Materials Research Bulletin
·
OSTI ID:22027853
Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond
Journal Article
·
Tue Jun 28 00:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:22027853
+1 more
Atmospheric pressure chemical vapor deposition of doped zinc oxide thin films and their electrical and optical properties
Miscellaneous
·
Wed Jan 01 00:00:00 EST 1992
·
OSTI ID:22027853