Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well

Han, W I; Lee, J H; Yu, J S; Choi, J C; Lee, H S

doi:10.1063/1.3669412

Title: Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well

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Abstract

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Authors:

Han, W I; Lee, J H; Yu, J S; Choi, J C ^[1]; Lee, H S ^[2]

Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of)
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

Publication Date:: Mon Dec 05 00:00:00 EST 2011

OSTI Identifier:: 22027832

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 99; Journal Issue: 23; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ACTIVATION ENERGY; CADMIUM TELLURIDES; CHARGE CARRIERS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONS; GALLIUM ARSENIDES; LAYERS; LIFETIME; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; TIME RESOLUTION; ZINC TELLURIDES

Citation Formats


                    Han, W I, Lee, J H, Yu, J S, Choi, J C, and Lee, H S. Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well.  United States: N. p., 2011. 
        Web.  doi:10.1063/1.3669412.

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                    Han, W I, Lee, J H, Yu, J S, Choi, J C, & Lee, H S. Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well.  United States.  https://doi.org/10.1063/1.3669412

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                    Han, W I, Lee, J H, Yu, J S, Choi, J C, and Lee, H S. 2011.  
        "Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well".  United States.  https://doi.org/10.1063/1.3669412.

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@article{osti_22027832,

  title        = {Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well},

  author       = {Han, W I and Lee, J H and Yu, J S and Choi, J C and Lee, H S},

  abstractNote = {We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.},

  doi          = {10.1063/1.3669412},

  url          = {https://www.osti.gov/biblio/22027832},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 23,

  volume       = 99,

  place        = {United States},

  year         = {Mon Dec 05 00:00:00 EST 2011},

  month        = {Mon Dec 05 00:00:00 EST 2011}

}

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