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Title: Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor

Abstract

The origin of instability under positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin film transistor (TFT) with different Si concentration has been investigated by x-ray photoelectron spectroscopy (XPS) and density of states (DOSs) analysis. It is found that stability of SIZO-TFT with 3 wt. % Si under PBS became more deteriorated than that of 1 wt. % Si incorporated SIZO-TFT due to the increased oxygen related trap distributed in energy range from conduction band to {approx}0.3 eV below the conduction band. The origin of instability under PBS was discussed in terms of oxygen related trap derived from DOSs and XPS analysis.

Authors:
 [1];  [2]; ;  [3];  [1]
  1. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764 (Korea, Republic of)
  2. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 130-012 (Korea, Republic of)
  3. School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22027788
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 17; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ENERGY-LEVEL DENSITY; EV RANGE; INDIUM COMPOUNDS; INSTABILITY; OXYGEN; PHASE STABILITY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; STRESSES; THIN FILMS; TRANSISTORS; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Hyung Kim, Do, Department of Physics, University of Dongguk, Seoul 100-715, Youn Yoo, Dong, Kwang Jung, Hyun, Hwan Kim, Dae, and Yeol Lee, Sang. Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor. United States: N. p., 2011. Web. doi:10.1063/1.3657511.
Hyung Kim, Do, Department of Physics, University of Dongguk, Seoul 100-715, Youn Yoo, Dong, Kwang Jung, Hyun, Hwan Kim, Dae, & Yeol Lee, Sang. Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor. United States. https://doi.org/10.1063/1.3657511
Hyung Kim, Do, Department of Physics, University of Dongguk, Seoul 100-715, Youn Yoo, Dong, Kwang Jung, Hyun, Hwan Kim, Dae, and Yeol Lee, Sang. 2011. "Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor". United States. https://doi.org/10.1063/1.3657511.
@article{osti_22027788,
title = {Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor},
author = {Hyung Kim, Do and Department of Physics, University of Dongguk, Seoul 100-715 and Youn Yoo, Dong and Kwang Jung, Hyun and Hwan Kim, Dae and Yeol Lee, Sang},
abstractNote = {The origin of instability under positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin film transistor (TFT) with different Si concentration has been investigated by x-ray photoelectron spectroscopy (XPS) and density of states (DOSs) analysis. It is found that stability of SIZO-TFT with 3 wt. % Si under PBS became more deteriorated than that of 1 wt. % Si incorporated SIZO-TFT due to the increased oxygen related trap distributed in energy range from conduction band to {approx}0.3 eV below the conduction band. The origin of instability under PBS was discussed in terms of oxygen related trap derived from DOSs and XPS analysis.},
doi = {10.1063/1.3657511},
url = {https://www.osti.gov/biblio/22027788}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 99,
place = {United States},
year = {Mon Oct 24 00:00:00 EDT 2011},
month = {Mon Oct 24 00:00:00 EDT 2011}
}