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Title: Optical properties of high quality Cu{sub 2}ZnSnSe{sub 4} thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3624827· OSTI ID:22027705
; ; ;  [1]; ; ; ;  [2];  [3];  [1]; ;  [4]
  1. Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom)
  2. Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom)
  3. Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki 19, 220072 Minsk (Belarus)
  4. Tallinn University Technology, Ehitajate tee 5, Tallinn 19086 (Estonia)

Cu{sub 2}ZnSnSe{sub 4} thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu{sub 2}ZnSnSe{sub 4} thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

OSTI ID:
22027705
Journal Information:
Applied Physics Letters, Vol. 99, Issue 6; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English