Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
- Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium)
- Katholieke Universiteit Leuven, 3001 Leuven (Belgium)
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.
- OSTI ID:
- 22027694
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CAPACITANCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
ENERGY-LEVEL DENSITY
FERMI LEVEL
GALLIUM ARSENIDES
HAFNIUM OXIDES
INDIUM PHOSPHIDES
INTERFACES
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
PASSIVATION
PERMITTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACES
THICKNESS