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Title: Lutetium-doped EuO films grown by molecular-beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4723570· OSTI ID:22025572
;  [1]; ;  [2]; ; ;  [3]; ;  [4];  [3];  [5];  [1]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Zentrum fuer elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Universitaetsstrasse 1, D-86159 Augsburg (Germany)
  3. Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853 (United States)
  4. Peter Gruenberg Institute, PGI 9-IT, JARA-FIT, Research Centre Juelich, D-52425 Juelich (Germany)
  5. Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany)

The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

OSTI ID:
22025572
Journal Information:
Applied Physics Letters, Vol. 100, Issue 22; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English