Substrate effect on the electronic structures of CuPc/graphene interfaces
- Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
The interfacial electronic structures of copper phthalocyanine (CuPc) deposited on a single-layer graphene (SLG) film prepared on Cu and SiO{sub 2} substrates (SLG/Cu and SLG/SiO{sub 2}) were investigated using ultraviolet photoelectron spectroscopy. The ionization energy of CuPc on SLG/Cu and SLG/SiO{sub 2} substrate is, respectively, 5.62 eV and 4.97 eV. The energy level alignments at the two interfaces were estimated. The results revealed that the height of the electron (hole) injection barriers are 1.20 (1.10) and 1.38 (0.92) eV at CuPc/SLG/Cu and CuPc/SLG/SiO{sub 2} interfaces, respectively.
- OSTI ID:
- 22025520
- Journal Information:
- Applied Physics Letters, Vol. 100, Issue 16; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL VAPOR DEPOSITION
COPPER
COPPER COMPOUNDS
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
ENERGY LEVELS
EV RANGE
HOLES
INTERFACES
LAYERS
ORGANIC SEMICONDUCTORS
PHTHALOCYANINES
SILICON OXIDES
SUBSTRATES
SURFACE IONIZATION
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL VAPOR DEPOSITION
COPPER
COPPER COMPOUNDS
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
ENERGY LEVELS
EV RANGE
HOLES
INTERFACES
LAYERS
ORGANIC SEMICONDUCTORS
PHTHALOCYANINES
SILICON OXIDES
SUBSTRATES
SURFACE IONIZATION
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY