Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

Journal Article · Mon Apr 09 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3702785· OSTI ID:22025513

Matsuoka, T; Sekiguchi, T; Itoh, K M ^[1]; Vlasenko, L S; Vlasenko, M P ^[2]

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1. School of Fundamental Science and Technology, Keio University, Yokohama 223-8522 (Japan)
2. A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation)

A paramagnetic recombination center having an orthorhombic symmetry with g[110] = 2.0095(2), g[001] = 2.0038(2), and g[110] = 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P{sub m} center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of {approx}10{sup 11} spins/cm{sup 2}. The employment of an isotopically enriched {sup 28}Si sample with the concentration of {sup 29}Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

• OSTI ID: 22025513
• Journal Information: Applied Physics Letters, Vol. 100, Issue 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANGULAR DISTRIBUTION
ELECTRON SPIN RESONANCE
INTERFACES
LANDE FACTOR
ORTHORHOMBIC LATTICES
PARAMAGNETISM
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON 28
SILICON 29
SILICON OXIDES
SPIN
SYMMETRY