Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

Journal Article · Mon Apr 02 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3700863· OSTI ID:22025499

McDonnell, S; Dong, H; Hawkins, J M; Brennan, B; Milojevic, M; Aguirre-Tostado, F S; Zhernokletov, D M; Hinkle, C L; Kim, J; Wallace, R M

The Al{sub 2}O{sub 3}/GaAs and HfO{sub 2}/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend on the dielectric material and the exposure temperature. Comparisons with previous studies show that ex situ characterization can result in misleading conclusions about the interface reactions occurring during the metal oxide deposition process.

• OSTI ID: 22025499
• Journal Information: Applied Physics Letters, Vol. 100, Issue 14; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
GALLIUM ARSENIDES
HAFNIUM OXIDES
INTERFACES
LAYERS
MONOCHROMATIC RADIATION
OXIDATION
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY