Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Journal Article · Mon Mar 26 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3699269· OSTI ID:22025486

Yan, F; Devaty, R P; Choyke, W J ^[1]; Gali, A ^[2]; Kimoto, T ^[3]; Ohshima, T ^[4]; Pensl, G ^[5]

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1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)
2. Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)
3. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
4. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
5. Lehrstuhl fuer Angewandte Physik, Universitaet Erlangen-Nuernberg, Staudstr. 7/A3 Erlangen (Germany)

Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

• OSTI ID: 22025486
• Journal Information: Applied Physics Letters, Vol. 100, Issue 13; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CARBON
ELECTRON BEAMS
EPITAXY
ION IMPLANTATION
IRRADIATION
LATTICE VIBRATIONS
LAYERS
MORSE POTENTIAL
PHONONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
POTENTIAL ENERGY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SURFACES