Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

Journal Article · Mon Mar 19 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3697568· OSTI ID:22025479

Issaoui, R; Achard, J; Tallaire, A; Silva, F; Gicquel, A ^[1]; Bisaro, R; Servet, B; Garry, G ^[2]; Barjon, J ^[3]

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1. LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France)
2. Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France)
3. GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

• OSTI ID: 22025479
• Journal Information: Applied Physics Letters, Vol. 100, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
FOURIER TRANSFORMATION
INFRARED SPECTRA
ION MICROPROBE ANALYSIS
LATTICE PARAMETERS
MASS SPECTRA
MASS SPECTROSCOPY
MONOCRYSTALS
PLASMA
RESOLUTION
SEMICONDUCTOR MATERIALS
SUBSTRATES
X-RAY DIFFRACTION