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Title: Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations Deep-UV optical gain has been demonstrated in Al{sub 0.7}Ga{sub 0.3}N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 {+-} 9 cm{sup -1} has been measured and the transparency threshold of 5 {+-} 1 {mu}J/cm{sup 2} was experimentally determined, corresponding to 1.4 x 10{sup 17} cm{sup -3} excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.
Authors: ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 22025430
Resource Type:Journal Article
Resource Relation:Journal Name: Applied Physics Letters; Journal Volume: 100; Journal Issue: 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:United States
Language:English
Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CHARGE CARRIERS; ELECTRONIC STRUCTURE; FLUCTUATIONS; GAIN; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPACITY; OPTICAL PUMPING; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SOLID STATE LASERS; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET SPECTRA