Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition

Journal Article · Mon Jan 30 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3675641· OSTI ID:22025426

Wu, J H; Goldman, R S

We have examined the formation and evolution of irradiation-induced nanorod (NR) growth through a comparison of focused-ion-beam irradiation of InSb wafers and InSb/GaAs heterostructures. Above a critical ion dose, cone-shaped NRs capped with In islands form on both InSb surfaces. For InSb wafers, the NR base diameter increases with ion energy. In the case of InSb/GaAs heterostructures, as the milled depth approaches the InSb/GaAs interface, the cone-shaped NRs transition to capless NRs with a truncated cone shape. These results suggest a growth mechanism in which both the NR cap and body are supplied by redeposition of atoms sputtered from InSb.

• OSTI ID: 22025426
• Journal Information: Applied Physics Letters, Vol. 100, Issue 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INTERFACES
ION BEAMS
IRRADIATION
NANOSTRUCTURES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SURFACES