Investigation and application of quantitative relationship between sp energy levels of Bi{sup 3+} ion and host lattice
- Department of Applied Chemistry, Institute of Chemistry and Pharmacy, Qingdao Agricultural University, Qingdao 266109 (China)
Information on {sup 1}S{sub 0}-{sup 3}P{sub 1} (A band) and {sup 1}S{sub 0}-{sup 1}P{sub 1} (C band) transition energy of Bi{sup 3+} ion in dozens of different compounds has been gathered and analyzed. With the use of the dielectric theory of the chemical bond for complex crystals, relationships between A and C absorption band and environmental factor h{sub e} were established: E{sub A}=2.972+6.206exp (-h{sub e}/0.551); E{sub C}=3.236+10.924exp (-h{sub e}/0.644). For Bi{sup 3+} doped hosts with known structure and refractive index, it is possible to predict Bi{sup 3+} energy level position with an good accuracy of typically {+-}0.51 eV using the two relationships. Moreover, a direct relationship between A and C band was deduced: E{sub C}=3.236+2.290(E{sub A}-2.972){sup 0.856}. Thus a very simple method to predict C band position was proposed. This work will be of great help to understand spectroscopy of Bi{sup 3+} and will be useful for developing new PDP, LED and mercury-free fluorescent lamp phosphors. - Graphical abstract: This figure shows relationship between positions of A band and C band of Bi{sup 3+} ion and environmental factor h{sub e} of host. It establishes the relation between macroscopical spectroscopy of Bi{sup 3+} ion and microcosmic structure of the hosts. Highlights: Black-Right-Pointing-Pointer Relationships between A, C absorption band and environmental factor h{sub e} were established. Black-Right-Pointing-Pointer A direct relation between A and C band was deduced and an easier method to predict C band was given. Black-Right-Pointing-Pointer Positions of C band of Bi{sup 3+} ion in some compounds were predicted using our formula.
- OSTI ID:
- 22012183
- Journal Information:
- Journal of Solid State Chemistry, Vol. . 191; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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