Synthesis, crystal structure and photoluminescence of a new Eu-doped Sr containing sialon (Sr{sub 0.94}Eu{sub 0.06})(Al{sub 0.3}Si{sub 0.7}){sub 4}(N{sub 0.8}O{sub 0.2}){sub 6}
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
- Mitsubishi Chemical Group, Science and Technology Research Center, Inc. 1000 Kamoshida-cho, Aoba-ku, Yokohama 227-8502 (Japan)
Colorless transparent platelet single crystals of a novel Eu{sup 2+}-doped strontium silicon aluminum oxynitride, (Sr{sub 0.94}Eu{sub 0.06})(Al{sub 0.3}Si{sub 0.7}){sub 4}(N{sub 0.8}O{sub 0.2}){sub 6}, were prepared at 1800 Degree-Sign C and 0.92 MPa of N{sub 2}. Fundamental reflections of electron and X-ray diffraction of the crystals were indexed with a face-centered orthorhombic unit cell (a=5.8061(5) A, b=37.762(3) A, c=9.5936(9) A). Diffuse streaks elongated in the b-axis direction were observed around the fundamental reflections hkl with h=2n+1 of the electron and X-ray diffraction, indicating stacking faults of (0 1 0)[1 0 0]/2. A crystal structure model without the stacking faults was obtained using the X-ray diffraction data of the fundamental reflections with the space group Fdd2. A SiN{sub 4}-tetrahedron double layer of [SiN{sub 2}]{sub 2} and a Sr/Eu double layer of [(Sr{sub 0.94}Eu{sub 0.06})Al{sub 1.2}Si{sub 0.8}N{sub 0.8} O{sub 1.2}]{sub 2} are stacked alternately along the b-axis direction. The title compound showed an emission with a peak wavelength of 490 nm under 334 nm excitation at room temperature. - Graphical abstract: Single crystals of a novel Eu{sup 2+}-doped strontium silicon aluminum oxynitride, (Sr{sub 0.94}Eu{sub 0.06})(Al{sub 0.3}Si{sub 0.7}){sub 4}(N{sub 0.8}O{sub 0.2}){sub 6}, having stacking faults on the (0 1 0) plane of an orthorhombic cell, were prepared at 1800 Degree-Sign C and 0.92 MPa of N{sub 2}. The compound showed emission with a peak wavelength of 490 nm under 334 nm excitation at room temperature. Highlights: Black-Right-Pointing-Pointer A new compound Eu{sup 2+}-doped (Sr{sub 0.94}Eu{sub 0.06})(Al{sub 0.3}Si{sub 0.7}){sub 4}(N{sub 0.8}O{sub 0.2}){sub 6} was prepared. Black-Right-Pointing-Pointer Stacking faults in the compound were clarified by electron and X-ray diffraction. Black-Right-Pointing-Pointer A basic crystal structure model was obtained based on the X-ray diffraction data. Black-Right-Pointing-Pointer An emission of 490 nm under 334 nm excitation at room temperature was observed.
- OSTI ID:
- 22012157
- Journal Information:
- Journal of Solid State Chemistry, Vol. . 190; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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