Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.
- Publication Date:
- OSTI Identifier:
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Semiconductors; Journal Volume: 45; Journal Issue: 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
- Country of Publication:
- United States
- 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; GALLIUM NITRIDES; TWO-DIMENSIONAL CALCULATIONS
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