High-voltage (3.3 kV) 4H-SiC JBS diodes
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
High-voltage 4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated and studied. The working area of the diodes (anode contact area) is 1.44 mm{sup 2}. At currents in the range from 10{sup -11} to 1.5 A, the forward current-voltage characteristic of the diodes is described in terms of the thermionic emission model, with the series resistance taken into account: Schottky barrier height {Phi}{sub B} = 1.16 eV, ideality factor n = 1.01, and series resistance R{sub s} = 2.2 {Omega} (32 m{Omega} cm{sup 2}). The value of R{sub s} is governed by the resistance of the blocking epitaxial n-base (impurity concentration N = 9 Multiplication-Sign 10{sup 14} cm{sup -3}, n-layer thickness d = 34 {mu}m). The diodes can block a reverse voltage of at least 3.3 kV (with a leakage current at room temperature on the order of 1 {mu}A). It is suggested that the leakage mechanism is associated with crystal lattice defects (dislocations) in SiC. It is shown that the reverse-recovery characteristics of the diodes are determined by the flow of a purely capacitive reverse current.
- OSTI ID:
- 22004806
- Journal Information:
- Semiconductors, Vol. 45, Issue 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Experimental 4H-SiC junction-barrier Schottky (JBS) diodes
Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications