Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

Journal Article · Wed Jun 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611060078· OSTI ID:22004787

Gutkin, A A; Rudinsky, M E; Ronghin, O I; Sitnikova, A A; Shakhmin, A A; Ber, B Ya; Kazantsev, D Yu ^[1]; Egorov, A Yu ^[2]; Zemlyakov, V E ^[3]; Konnikov, S G ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Russian Academy of Sciences, Nanotechnology Research and Education Center, St. Petersburg Academic University (Russian Federation)
3. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schroedinger and Poisson equations.

• OSTI ID: 22004787
• Journal Information: Semiconductors, Vol. 45, Issue 6; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CAPACITANCE
COMPUTERIZED SIMULATION
ENERGY SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
ONE-DIMENSIONAL CALCULATIONS
POISSON EQUATION
QUANTUM WELLS