On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

Journal Article · Sat Oct 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611100083· OSTI ID:22004712

Sadokhin, A V; Strokan, N B; Lebedev, A A ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Owing to the radiation-induced pronounced conductivity compensation in silicon carbide, carrier localization (trapping) prevails over recombination in capture of nonequilibrium carriers. This makes it possible, by raising the temperature, to reduce the time of carrier retention by a trapping center to values shorter than the duration of signal shaping by electronic circuits. For structural defects created by 6.5-MeV protons, the temperature excluding degradation of the detector signal via carrier localization is estimated. The values of the appearing generation current the noise of which can restrict the operation of a detector in the spectrometric mode are determined.

• OSTI ID: 22004712
• Journal Information: Semiconductors, Vol. 45, Issue 10; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPTURE
DEFECTS
ELECTRONIC CIRCUITS
HARDNESS
PROTONS
RADIATION DETECTORS
RECOMBINATION
RETENTION
SILICON CARBIDES