Electroluminescence at a wavelength of 1.54 {mu}m in Si:Er/Si structures consisting of a number of p-n junctions
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Lobachevskii University of Nizhny Novgorod (Russian Federation)
- Lobachevskii University of Nizhni Novgorod, Physical Technical Research Institute (Russian Federation)
A method of connecting several p{sup +}-n junctions in the same Si:Er/Si structure is demonstrated; this method makes it possible to increase the electroluminescence intensity at a wavelength of 1.54 {mu}m. The structures have been grown by sublimation molecular-beam epitaxy.
- OSTI ID:
- 22004705
- Journal Information:
- Semiconductors, Vol. 45, Issue 11; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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