Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.
- OSTI ID:
- 22004684
- Journal Information:
- Semiconductors, Vol. 45, Issue 12; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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