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Title: Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

Abstract

The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.

Authors:
;  [1]; ;  [2]; ;  [1];  [2]; ;  [3]
  1. Moscow State University, Physical Department (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  3. University of Southampton, Optoelectronic Research Center (United Kingdom)
Publication Date:
OSTI Identifier:
22004663
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; CRYSTALS; FILMS; LASERS; NANOSTRUCTURES; PHOTOCONDUCTIVITY; PULSES; SHAPE; SILICON; SURFACES

Citation Formats

Emelyanov, A. V., E-mail: emelyanov.andrey@mail.ru, Kazanskii, A G, Kashkarov, P K, Konkov, O I, Terukov, E I, Forsh, P A, Khenkin, M V, Kukin, A V, Beresna, M, and Kazansky, P. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties. United States: N. p., 2012. Web. doi:10.1134/S1063782612060097.
Emelyanov, A. V., E-mail: emelyanov.andrey@mail.ru, Kazanskii, A G, Kashkarov, P K, Konkov, O I, Terukov, E I, Forsh, P A, Khenkin, M V, Kukin, A V, Beresna, M, & Kazansky, P. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties. United States. https://doi.org/10.1134/S1063782612060097
Emelyanov, A. V., E-mail: emelyanov.andrey@mail.ru, Kazanskii, A G, Kashkarov, P K, Konkov, O I, Terukov, E I, Forsh, P A, Khenkin, M V, Kukin, A V, Beresna, M, and Kazansky, P. 2012. "Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties". United States. https://doi.org/10.1134/S1063782612060097.
@article{osti_22004663,
title = {Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties},
author = {Emelyanov, A. V., E-mail: emelyanov.andrey@mail.ru and Kazanskii, A G and Kashkarov, P K and Konkov, O I and Terukov, E I and Forsh, P A and Khenkin, M V and Kukin, A V and Beresna, M and Kazansky, P},
abstractNote = {The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.},
doi = {10.1134/S1063782612060097},
url = {https://www.osti.gov/biblio/22004663}, journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 46,
place = {United States},
year = {Fri Jun 15 00:00:00 EDT 2012},
month = {Fri Jun 15 00:00:00 EDT 2012}
}